device architecture

TSMC 16nm finFET process and efforts to increase p-finFET mobility using germanium to be detailed at December's International Electron Devices Meeting.

Semiconductor process options outlined at IEDM by Luc van den Hove of imec as industry faces hard choices and rising costs

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium