20nm

DATE: Double patterning and finFETs force flexibility on tools

EDA companies are having to plan for the different ways in which double patterning and finFETs could move into fabs, Antun Domic of Synopsys explains.
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DATE: Early shift to finFET processes challenges IP development strategies

An early shift to finFET processes is making developing IP libraries more challenging.
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Cadence updates Virtuoso for the 20nm generation

Cadence Design Systems has built into its latest Virtuoso update features designed to tackle the problems of working with the 20nm generation of processes with finer control over layout-dependent effects, double patterning and new types of local interconnect.
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IPSoC: 20nm causes analog ‘density fill headaches’

20nm design is fraught with problems for analog design but one that causes the biggest headaches is density variation, says Synopsys' Joachim Kunkel.
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FinFET tipsheet for IEDM

finFETs are vital to the next generation of CMOS processes from Intel, TSMC and others. How will process issues including bulk vs SOI substrates, density limitations, thickness control, and planar device integration affect their practical implementation?

Mentor Graphics CEO Wally Rhines – Interview

The Mentor chief discusses ESL-based low power, emulation, 32nm to 20nm and using tools in the cloud.

EDA and IP vendors roll out support for TSMC’s 20nm, 3DIC processes

IP and EDA vendors line up to support TSMC 20nm process, CoWoS 3DIC technology

Intel, TSMC finFETs to star at IEDM

Intel finFET family grows to support SoC use, as TSMC boosts p-channel performance with germanium
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The physical design challenges of 20nm processes

Manufacturability, routing, library design and more - it all needs rethinking at 20nm
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TSMC updates reference flows for 20nm and CoWoS

TSMC has released two reference flows – one for its 20nm and the other for the form of 3D integration favored by the Taiwanese foundry, chip on wafer on substrate (CoWoS).


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